Implementations of methods of cutting a semiconductor substrate may include aligning a first saw blade substantially perpendicularly with a crystal plane of a non-cubic crystalline lattice of a semiconductor substrate coupled with a backmetal layer and cutting through at least a majority of the semiconductor substrate at an angle substantially perpendicular with the crystal plane of the non-cubic crystalline lattice of the semiconductor substrate. The method may also include aligning a second saw blade substantially perpendicularly with the semiconductor substrate and cutting entirely through the semiconductor substrate and the backmetal layer using the second saw blade.