Invention Grant
- Patent Title: Differing device characteristics on a single wafer by selective etch
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Application No.: US16103433Application Date: 2018-08-14
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Publication No.: US10679901B2Publication Date: 2020-06-09
- Inventor: Huimei Zhou , Shogo Mochizuki , Gen Tsutsui , Ruqiang Bao
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L21/02 ; H01L21/306 ; H01L21/311
Abstract:
Integrated chips and methods of forming the same include etching a first stack of layers in a first region and etching a second stack of layers in a second region. The first stack of layers includes a first semiconductor layer having a first thickness over a first sacrificial layer having a second thickness. Etching the first stack of layers removes the first sacrificial layer from the first stack of layers and creates a first gap. The second stack of layers includes a second semiconductor layer having a third thickness over a second sacrificial layer having a fourth thickness. Etching the second stack of layers removes the second sacrificial layer from the second stack of layers and to create a second gap. A dielectric material fills the first gap and the second gap.
Public/Granted literature
- US20200058555A1 DIFFERING DEVICE CHARACTERISTICS ON A SINGLE WAFER BY SELECTIVE ETCH Public/Granted day:2020-02-20
Information query
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