Invention Grant
- Patent Title: High thermal release interposer
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Application No.: US16016888Application Date: 2018-06-25
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Publication No.: US10679919B2Publication Date: 2020-06-09
- Inventor: Kuiwon Kang , Zhijie Wang , Bohan Yan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Patterson & Sheridan L.L.P.
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00 ; H01L23/367 ; H01L23/373

Abstract:
An integrated circuit package having an interposer with increased thermal conductivity and techniques for fabricating such an integrated circuit package are provided. One example integrated circuit package generally includes a package substrate, at least one semiconductor die disposed above the package substrate, and an interposer disposed above the at least one semiconductor die. The interposer includes a dielectric layer, and a metallic plate disposed adjacent to a first portion of the dielectric layer. The height of the metallic plate is greater than a height of the dielectric layer.
Public/Granted literature
- US20190393120A1 HIGH THERMAL RELEASE INTERPOSER Public/Granted day:2019-12-26
Information query
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