Invention Grant
- Patent Title: Capacitance reduction in sea of lines BEOL metallization
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Application No.: US15829435Application Date: 2017-12-01
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Publication No.: US10679934B2Publication Date: 2020-06-09
- Inventor: Benjamin D. Briggs , Lawrence A. Clevenger , Huai Huang , Christopher J. Penny , Michael Rizzolo , Hosadurga Shobha
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/532 ; H01L21/768
Abstract:
A semiconductor interconnect structure and a method of fabricating the same are provided. The semiconductor interconnect structure includes a sea of interconnect lines including metal lines and neighboring dummy lines. The semiconductor interconnect structure further includes a dielectric layer arranged between the sea of lines.
Public/Granted literature
- US20190172783A1 CAPACITANCE REDUCTION IN SEA OF LINES BEOL METALLIZATION Public/Granted day:2019-06-06
Information query
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