Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16221000Application Date: 2018-12-14
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Publication No.: US10679959B2Publication Date: 2020-06-09
- Inventor: Christoph Kutter , Ewald Soutschek , Georg Meyer-Berg
- Applicant: INTEL DEUTSCHLAND GMBH
- Applicant Address: DE Neubiberg
- Assignee: Intel Deutschland GmbH
- Current Assignee: Intel Deutschland GmbH
- Current Assignee Address: DE Neubiberg
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/538 ; H01L21/683 ; H01L23/48 ; H01L23/12 ; H01L23/50 ; H01L21/56
Abstract:
A semiconductor device including a semiconductor chip having a first conduction element; a substrate having second and third conduction elements; and external connection elements configured to form an electrical path between the second and third conduction elements via the first conduction element.
Public/Granted literature
- US20190123009A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-25
Information query
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