A heat and shock resistant integrated circuit (IC) of the present invention includes a base material, a metal layer disposed on the base material, a silicon die disposed on the metal layer, additive material disposed on the base material, gas filled filler material disposed between the additive material and the silicon die, and first traces electrically connecting the silicon die to the additive material. Packing of the integrated circuit provides exceptional thermal stress relief and impact protection of circuitry within the packaging.