Invention Grant
- Patent Title: Protection circuit
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Application No.: US15725246Application Date: 2017-10-04
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Publication No.: US10679981B2Publication Date: 2020-06-09
- Inventor: Chien-Yao Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/06 ; H01L29/06 ; H01L27/092 ; H01L29/08 ; H01L29/735

Abstract:
A circuit includes a first transistor, a second transistor and a first resistive load. The first transistor has a first terminal coupled to a first reference voltage terminal, a second terminal coupled to a second reference voltage terminal, and a control terminal coupled to the first reference voltage terminal. The second transistor has a first terminal coupled to the second reference voltage terminal, a second terminal coupled to the first reference voltage terminal and the control terminal of the first transistor, and a control terminal coupled to the second reference voltage terminal and the second terminal of the first transistor. The first transistor further comprises a third terminal coupled to the second reference voltage terminal through the first resistive load.
Public/Granted literature
- US20180286851A1 PROTECTION CIRCUIT Public/Granted day:2018-10-04
Information query
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