Invention Grant
- Patent Title: Isolated circuit formed during back end of line process
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Application No.: US16208335Application Date: 2018-12-03
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Publication No.: US10679986B2Publication Date: 2020-06-09
- Inventor: Kenji Yoshida , Tetsuo Sato , Shigeru Maeta , Toshio Kimura
- Applicant: RENESAS ELECTRONICS AMERICA INC.
- Applicant Address: US CA Milpitas
- Assignee: Renesas Electronics America Inc.
- Current Assignee: Renesas Electronics America Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Foley & Lardner LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L27/12 ; H01L29/786 ; H01L23/538 ; H03K7/08 ; H01L25/065 ; H01L23/528 ; H01L21/8258

Abstract:
A semiconductor die is disclosed upon which is formed direct current (DC) isolated first and second circuits. The first circuit is configured for electrical connection to a first ground. The second circuit is configured for electrical connection to a second ground. The first and second grounds can be at different potentials. The first and second circuits were formed using front end of line (FEOL) and back end of line (BEOL) processes. The first circuit includes a plurality of first devices, such as transistors, which were formed during the FEOL process, and the second circuit includes only second devices, such as transistors, which were formed during the BEOL process.
Public/Granted literature
- US20190103401A1 ISOLATED CIRCUIT FORMED DURING BACK END OF LINE PROCESS Public/Granted day:2019-04-04
Information query
IPC分类: