Invention Grant
- Patent Title: Construction of integrated circuitry and a DRAM construction
-
Application No.: US15858263Application Date: 2017-12-29
-
Publication No.: US10679996B2Publication Date: 2020-06-09
- Inventor: Kazuyoshi Yuki , Takayoshi Tashiro
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; G11C5/10 ; G11C11/402
Abstract:
A construction of integrated circuitry comprises a structure comprising conductive material having insulative material there-above. The conductive material and the insulative material respectively have opposing sides in a vertical cross-section. A first insulating material is laterally outward of the opposing sides of the conductive material in the vertical cross-section. A second insulating material is laterally outward of the first insulating material in the vertical cross-section. The second insulating material is of different composition from that of the first insulating material. The second insulating material laterally covers a lower portion of the opposing sides of the insulative material in the vertical cross-section. The second insulating material does not laterally cover an upper portion of the opposing sides of the insulative material in the vertical cross-section. A third insulating material is laterally outward of the second insulating material in the vertical cross-section. The third insulating material is of different composition from that of the second insulating material. The third insulating material laterally covers the lower portion and the upper portion of the opposing sides of the insulative material in the vertical cross-section.
Public/Granted literature
- US20190206876A1 Construction Of Integrated Circuitry And A DRAM Construction Public/Granted day:2019-07-04
Information query
IPC分类:
