Invention Grant
- Patent Title: Charge trap structure with barrier to blocking region
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Application No.: US15675223Application Date: 2017-08-11
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Publication No.: US10680006B2Publication Date: 2020-06-09
- Inventor: Chris M Carlson
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/28 ; H01L29/423
Abstract:
Various embodiments, disclosed herein, include methods and apparatus having charge trap structures, where each charge trap structure includes a dielectric barrier between a gate and a blocking dielectric on a charge trap region of the charge trap structure. In various embodiments, material of the dielectric barrier of each of the charge trap structures may have a dielectric constant greater than that of aluminum oxide. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20190051661A1 CHARGE TRAP STRUCTURE WITH BARRIER TO BLOCKING REGION Public/Granted day:2019-02-14
Information query
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