Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16351589Application Date: 2019-03-13
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Publication No.: US10680012B2Publication Date: 2020-06-09
- Inventor: Shihoko Asai , Hisakazu Matsumori , Yasuko Takechi
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2cab4ca7
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11573 ; H01L27/11568 ; H01L23/58 ; H01L27/11575 ; H01L29/10 ; H01L21/311 ; H01L21/02 ; H01L21/027

Abstract:
According to one embodiment, there is provided a semiconductor device including a stacked body, a semiconductor columnar member, an insulating film, and a structure. The stacked body is disposed above a semiconductor substrate. In the stacked body, a conductive film and an insulating layer are alternately disposed in a stacking direction. The semiconductor columnar member penetrates the stacked body in the stacking direction. The insulating film surrounds the semiconductor columnar member and penetrates the stacked body in the stacking direction. The structure is disposed in a peripheral circuit region on the semiconductor substrate. The peripheral circuit region is a region including a plurality of circuit blocks. The structure has a plate-shaped portion extending at least between the plurality of circuit blocks.
Public/Granted literature
- US20200091184A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-03-19
Information query
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