In some embodiments, the present disclosure relates to a method of forming a memory circuit. The method may be performed by forming an interconnect wire within an inter-level dielectric (ILD) layer over a substrate. A conjunct electrode structure is formed over the interconnect wire, a data storage film is formed over the conjunct electrode structure, and a disjunct electrode structure is formed over the data storage film. The data storage film, the disjunct electrode structure, and the conjunct electrode structure are patterned to form a first data storage layer between the interconnect wire and a first disjunct electrode and to form a second data storage layer between the interconnect wire and a second disjunct electrode.