Invention Grant
- Patent Title: Semiconductor substrate
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Application No.: US16319053Application Date: 2017-07-13
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Publication No.: US10680068B2Publication Date: 2020-06-09
- Inventor: Ko Imaoka , Takanori Murasaki , Toshihisa Shimo , Hidetsugu Uchida , Akiyuki Minami
- Applicant: SICOXS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SICOXS CORPORATION
- Current Assignee: SICOXS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@d1dfa8
- International Application: PCT/JP2017/025600 WO 20170713
- International Announcement: WO2018/016417 WO 20180125
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/04
Abstract:
A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1×1021 (atoms/cm3) or more of particular atoms.
Public/Granted literature
- US20200006493A1 SEMICONDUCTOR SUBSTRATE Public/Granted day:2020-01-02
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