Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16044956Application Date: 2018-07-25
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Publication No.: US10680072B2Publication Date: 2020-06-09
- Inventor: Sho Nakanishi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS COPORATION
- Current Assignee: RENESAS ELECTRONICS COPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@68beadd8
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/06 ; H01L29/78 ; H01L29/739 ; H01L29/861

Abstract:
The reliability of resistive field plate part-containing semiconductor device is improved. In peripheral region of semiconductor chip, the outer circumference end of internal circulation wire is separated from outer circumference end of first conductor pattern of resistive field plate part toward element region. Inner circumference end of external circulation wire is separated from inner circumference end of second conductor pattern of resistive field plate part toward outer circumference of the chip. First conductor pattern of resistive field plate part is partially extended to over thin insulation film to form first lead-out part, and internal circulation wire and first lead-out part of first conductor pattern are electrically coupled via first coupling hole. Second conductor pattern of resistive field plate part is partially extended to over thin insulation film to form second lead-out part, external circulation wire and second lead-out part of second conductor pattern are electrically coupled via second coupling hole.
Public/Granted literature
- US20190097002A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-03-28
Information query
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