Invention Grant
- Patent Title: Semiconductor structure and fabrication method thereof
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Application No.: US16006140Application Date: 2018-06-12
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Publication No.: US10680079B2Publication Date: 2020-06-09
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2f61255d
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L29/06 ; H01L21/762 ; H01L29/165 ; H01L29/08
Abstract:
A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming a gate structure on a base substrate and forming a first dielectric layer on the base substrate. The first dielectric layer has a top lower than the gate structure and exposes a sidewall portion of the gate structure. The method also includes forming an isolation sidewall spacer on the exposed sidewall portion of the gate structure.
Public/Granted literature
- US20180301542A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2018-10-18
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