Invention Grant
- Patent Title: Semiconductor device having an active trench and a body trench
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Application No.: US16456895Application Date: 2019-06-28
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Publication No.: US10680089B2Publication Date: 2020-06-09
- Inventor: Maria Cotorogea , Frank Wolter , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Yvonne Gawlina-Schmidl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/78 ; H01L29/739 ; H01L29/10 ; H01L29/06 ; H01L29/08 ; H01L27/115 ; H01L27/105 ; H01L27/11521
Abstract:
A semiconductor device is described in which a conductive channel is present along an active gate trench of the device when a gate potential is at an on-voltage, whereas no conductive channel is present along an inactive gate trench of the device for the same gate potential condition.
Public/Granted literature
- US20190319123A1 Semiconductor Device Having an Active Trench and a Body Trench Public/Granted day:2019-10-17
Information query
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