Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16229613Application Date: 2018-12-21
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Publication No.: US10680091B2Publication Date: 2020-06-09
- Inventor: Tomoyoshi Kushida , Yoshitaka Nagasato , Naotaka Iwata , Hiroyuki Sakaki
- Applicant: Toyota Jidosha Kabushiki Kaisha , Toyota School Foundation
- Applicant Address: JP Toyota-shi, Aichi-ken JP Nagoya-Shi, Aichi-Ken
- Assignee: Toyota Jidosha Kabushiki Kaisha,Toyota School Foundation
- Current Assignee: Toyota Jidosha Kabushiki Kaisha,Toyota School Foundation
- Current Assignee Address: JP Toyota-shi, Aichi-ken JP Nagoya-Shi, Aichi-Ken
- Agency: Dinsmore & Shohl LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3b7f3caa com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@56346020
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/36 ; H01L29/423 ; H01L29/417 ; H01L29/10 ; H01L29/08 ; H01L29/66 ; H01L29/06 ; H01L29/20
Abstract:
In a semiconductor device having a heterojunction type superjunction structure, a drain portion and a source portion are electrically connected to one of a two-dimensional electron gas layer and a two-dimensional hole gas layer, and a gate portion is prevented by an insulating region from directly contacting the one of the two-dimensional election gas layer and the two-dimensional hole gas layer.
Public/Granted literature
- US20190198652A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-06-27
Information query
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