Invention Grant
- Patent Title: Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance
-
Application No.: US15898669Application Date: 2018-02-19
-
Publication No.: US10680099B2Publication Date: 2020-06-09
- Inventor: Liming Li , Shaoqiang Zhang , Ruchil Kumar Jain , Raj Verma Purakh
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Thompson Hine LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/761 ; H01L21/8238 ; H01L27/06 ; H01L29/49 ; H01L29/66 ; H01L29/08 ; H01L29/10
Abstract:
A transistor, such as laterally diffused (LD) transistor, having a band region below a drift well is disclosed. The band region and drift well are oppositely doped. The band region is self-aligned to the drift well. The band region reduces the depth of the drift well. A shallower drift well reduces risk of punch-through, improving reliability. In addition, the shallower drift well reduces the drain to body parasitic capacitance which improves performance.
Public/Granted literature
Information query
IPC分类:
