Invention Grant
- Patent Title: CMOS semiconductor device having fins and method of fabricating the same
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Application No.: US16141509Application Date: 2018-09-25
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Publication No.: US10680109B2Publication Date: 2020-06-09
- Inventor: Shu-Hao Kuo , Jung-Hao Chang , Chao-Hsien Huang , Li-Te Lin , Kuo-Cheng Ching
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/417 ; H01L21/8238 ; H01L27/092 ; H01L29/78 ; H01L27/12 ; H01L21/84 ; H01L21/306 ; H01L29/06 ; H01L21/762 ; H01L21/3065 ; H01L21/311 ; H01L21/02
Abstract:
A device includes a semiconductor substrate, a first fin arranged over the semiconductor substrate, and an isolation structure. The first fin includes an upper portion, a bottom portion, and an insulator layer between the upper portion and the bottom portion. A top surface of the insulator layer is wider than a bottom surface of the upper portion of the first fin. The isolation structure surrounds the bottom portion of the first fin.
Public/Granted literature
- US20190097056A1 SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME Public/Granted day:2019-03-28
Information query
IPC分类:
