Invention Grant
- Patent Title: Thin-film transistor having a floating gate between a control gate and a gate electrode, manufacturing method thereof, display substrate and display device
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Application No.: US16097327Application Date: 2018-03-30
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Publication No.: US10680113B2Publication Date: 2020-06-09
- Inventor: Zhen Song , Guoying Wang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Dilworth & Barrese, LLP.
- Agent Michael J. Musella, Esq.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@437d945f
- International Application: PCT/CN2018/081386 WO 20180330
- International Announcement: WO2018/205770 WO 20181115
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/76 ; H01L21/00 ; H01L29/786 ; H01L27/32 ; H01L29/788

Abstract:
A thin-film transistor and a manufacturing method thereof, a display substrate and a display device are disclosed. The thin-film transistor includes a control gate, a floating gate, an injection layer, an active layer, a gate electrode, and a source electrode and a drain electrode, which are provided on the base substrate, in which the source electrode and the drain electrode are opposite to each other and electrically connected to the active layer. The injection layer is provided between the floating gate and the active layer; the active layer is provided between the control gate and the gate electrode; and the floating gate is provided between the control gate and the active layer.
Public/Granted literature
- US20190288118A1 THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, DISPLAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2019-09-19
Information query
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