Invention Grant
- Patent Title: Schottky diode including an insulating substrate and a Schottky diode unit and method for making the same
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Application No.: US16239580Application Date: 2019-01-04
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Publication No.: US10680119B2Publication Date: 2020-06-09
- Inventor: Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4e08c973
- Main IPC: H01L29/87
- IPC: H01L29/87 ; H01L29/66 ; H01L51/00 ; H01L29/872 ; H01L29/24 ; H01L29/20 ; H01L29/16 ; H01L29/04 ; H01L51/05 ; H01L21/28 ; H01L29/06 ; B82Y10/00 ; H01L29/49 ; H01L29/786 ; H01L29/47 ; H01L29/775
Abstract:
A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode; the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.
Public/Granted literature
- US20190157467A1 SCHOTTKY DIODE AND METHOD FOR MAKING THE SAME Public/Granted day:2019-05-23
Information query
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