Invention Grant
- Patent Title: MEMS component having a high integration density
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Application No.: US15546229Application Date: 2015-12-18
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Publication No.: US10680159B2Publication Date: 2020-06-09
- Inventor: Thomas Metzger , Jürgen Portmann
- Applicant: SNAPTRACK, INC.
- Applicant Address: US CA San Diego
- Assignee: SnapTrack, Inc.
- Current Assignee: SnapTrack, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Patterson & Sheridan, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@41b1c2cc
- International Application: PCT/EP2015/080544 WO 20151218
- International Announcement: WO2016/134803 WO 20160901
- Main IPC: H01L41/053
- IPC: H01L41/053 ; H03H9/05 ; B81B7/02 ; H01L41/047 ; H01L41/08 ; H01L41/23
Abstract:
A MEMS component having increased integration density and a method for manufacturing such a component are specified. The component comprises a base wafer and a cover wafer arranged over this. A first cavity is arranged between the base wafer and the cover wafer. A second cavity is arranged over the cover wafer, below a thin-layer covering. The cavities contain component structures.
Public/Granted literature
- US20180013055A1 MEMS COMPONENT HAVING A HIGH INTEGRATION DENSITY Public/Granted day:2018-01-11
Information query
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