Invention Grant
- Patent Title: Multilayer hardmask for high performance MRAM devices
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Application No.: US16007644Application Date: 2018-06-13
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Publication No.: US10680169B2Publication Date: 2020-06-09
- Inventor: Michael Rizzolo , Daniel C. Edelstein , Theodorus E. Standaert , Kisup Chung , Isabel C. Chu , John C. Arnold
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/02 ; H01L27/22

Abstract:
Multilayered hardmask structures are provided which can prevent degradation of the performance of a magnetic tunnel junction (MTJ) structure. The multilayered hardmask structures include at least a halogen barrier hardmask layer and an upper hardmask layer. The halogen barrier hardmask layer can prevent halogen ions that are used to pattern the upper hardmask layer from diffusing into the MTJ structure.
Public/Granted literature
- US20190386210A1 MULTILAYER HARDMASK FOR HIGH PERFORMANCE MRAM DEVICES Public/Granted day:2019-12-19
Information query
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