Invention Grant
- Patent Title: Method of forming hybrid nanostructure on graphene, hybrid nanostructure, and device including the hybrid nanostructure
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Application No.: US13710549Application Date: 2012-12-11
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Publication No.: US10680176B2Publication Date: 2020-06-09
- Inventor: Sang-woo Kim , Hyun-kyu Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Cantor Colburn LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@221a9932
- Main IPC: H01L51/00
- IPC: H01L51/00 ; B82Y10/00 ; H01L29/16 ; H01L21/02 ; H01L29/41 ; B82Y40/00 ; H01L29/06 ; H01L31/18 ; B82Y30/00 ; C01B32/186 ; C01B32/194
Abstract:
A method of forming a hybrid nanostructure on graphene, the method including providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure.
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