Invention Grant
- Patent Title: Multi-wavelength semiconductor comb lasers
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Application No.: US15483678Application Date: 2017-04-10
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Publication No.: US10680407B2Publication Date: 2020-06-09
- Inventor: Geza Kurczveil , Di Liang , Raymond G. Beausoleil
- Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Hewlett Packard Enterprise Patent Department
- Main IPC: H01S5/10
- IPC: H01S5/10 ; H01S5/065 ; H01S5/068 ; H01S5/14 ; H01S5/02 ; H01S5/026 ; H01S3/106 ; H01S5/34

Abstract:
Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.
Public/Granted literature
- US20180294622A1 MULTI-WAVELENGTH SEMICONDUCTOR COMB LASERS Public/Granted day:2018-10-11
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