Invention Grant
- Patent Title: Radio frequency front-end circuit
-
Application No.: US16180887Application Date: 2018-11-05
-
Publication No.: US10680556B2Publication Date: 2020-06-09
- Inventor: Nadim Khlat
- Applicant: Qorvo US, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/21 ; H03F3/19 ; H04B1/40 ; H02M3/07

Abstract:
A radio frequency (RF) front-end circuit is provided. A power management circuit is configured to output a first modulated voltage, a second modulated voltage, a first bias voltage, and a second bias voltage via a first voltage port(s), a second voltage port(s), a first bias voltage port(s), and a second bias voltage port(s), respectively. An amplifier circuit(s) is configured to amplify an RF signal based on a selected modulated voltage and a selected bias voltage outputted by a selected voltage port and a selected bias voltage port, respectively. The power management circuit can be controlled to dynamically increase the selected bias voltage at the selected bias voltage port in case the selected bias voltage drops below a defined bias voltage threshold. As such, it may be possible to maintain the selected bias voltage at a desirable level, thus enabling the amplifier circuit(s) to operate with improved linearity and efficiency.
Public/Granted literature
- US20200144966A1 RADIO FREQUENCY FRONT-END CIRCUIT Public/Granted day:2020-05-07
Information query
IPC分类: