Invention Grant
- Patent Title: Power amplifier circuit
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Application No.: US16185394Application Date: 2018-11-09
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Publication No.: US10680558B2Publication Date: 2020-06-09
- Inventor: Hideyuki Satou
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@34924e88
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/02 ; H03F3/213 ; H03F3/195 ; H03F3/24

Abstract:
A power amplifier circuit includes a first transistor having a base to which a radio frequency (RF) signal is supplied and a collector to which a variable power-supply voltage corresponding to a level of the RF signal is supplied, and being configured to amplify the RF signal; a bias circuit including a second transistor configured to supply a bias current to the base of the first transistor; and an adjustment circuit configured to cause the bias current to be supplied to the base of the first transistor to decrease with decrease in the variable power-supply voltage by causing a current to be supplied to a base of the second transistor to decrease.
Public/Granted literature
- US20190149095A1 POWER AMPLIFIER CIRCUIT Public/Granted day:2019-05-16
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