Invention Grant
- Patent Title: GaN based fail-safe shutdown of high-current drivers
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Application No.: US16554042Application Date: 2019-08-28
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Publication No.: US10680589B2Publication Date: 2020-06-09
- Inventor: Edward Lee , Ravi Ananth , Michael Chapman
- Applicant: Efficient Power Conversion Corporation
- Applicant Address: US CA El Segundo
- Assignee: Efficient Power Conversion Corporation
- Current Assignee: Efficient Power Conversion Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Blank Rome LLP
- Main IPC: H03K3/356
- IPC: H03K3/356 ; H03K17/687 ; H01L29/20 ; H01L29/778 ; H03K17/30

Abstract:
A driver shutdown circuit configured to trigger driver shutdown based on the magnitude and duration of the driving current. A first GaN FET is connected to a second GaN FET and an input node and generates a discharging current proportional to the driving current. The discharging current is drawn from a timer capacitor through the first and second GaN FETs. The second GaN FET receives a control signal and stops flow of the discharging current in between driver pulses so a pre-charger circuit can recharge the timer capacitor to a particular voltage. The discharging current drains the timer capacitor, and a shutdown signal generator outputs a shutdown signal to the driver in response to the voltage on the timer capacitor decreasing below a triggering voltage.
Public/Granted literature
- US20200076411A1 GaN BASED FAIL-SAFE SHUTDOWN OF HIGH-CURRENT DRIVERS Public/Granted day:2020-03-05
Information query
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