GaN based fail-safe shutdown of high-current drivers
Abstract:
A driver shutdown circuit configured to trigger driver shutdown based on the magnitude and duration of the driving current. A first GaN FET is connected to a second GaN FET and an input node and generates a discharging current proportional to the driving current. The discharging current is drawn from a timer capacitor through the first and second GaN FETs. The second GaN FET receives a control signal and stops flow of the discharging current in between driver pulses so a pre-charger circuit can recharge the timer capacitor to a particular voltage. The discharging current drains the timer capacitor, and a shutdown signal generator outputs a shutdown signal to the driver in response to the voltage on the timer capacitor decreasing below a triggering voltage.
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