Invention Grant
- Patent Title: Microelectromechanical device, method for manufacturing a microelectromechanical device, and method for manufacturing a system on chip using a CMOS process
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Application No.: US15951489Application Date: 2018-04-12
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Publication No.: US10683203B2Publication Date: 2020-06-16
- Inventor: Thoralf Kautzsch , Steffen Bieselt , Heiko Froehlich , Andre Roeth , Maik Stegemann , Mirko Vogt
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE
- Agency: Design IP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@77b84706
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B81B7/02 ; B81B5/00 ; B81C1/00

Abstract:
A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.
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