Invention Grant
- Patent Title: MXene nanosheet and manufacturing method thereof
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Application No.: US15222345Application Date: 2016-07-28
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Publication No.: US10683208B2Publication Date: 2020-06-16
- Inventor: Hyeonjin Shin , Hyoyoung Lee , Yeoheung Yoon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungkyunkwan University
- Current Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungkyunkwan University
- Current Assignee Address: KR Gyeonggi-do KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5054f103
- Main IPC: B32B9/00
- IPC: B32B9/00 ; C01B32/921 ; C01B21/06 ; B82Y40/00 ; B82Y30/00

Abstract:
A method of manufacturing a MXene nanosheet includes removing an A atomic layer from an inorganic compound having a formula of Mn+1AXn to form a nanosheet, the nanosheet having a formula of Mn+1XnTs, and reducing the nanosheet having a formula of Mn+1XnTs to form an MXene nanosheet, the MXene nanosheet having a formula of Mn+1Xn, wherein M is at least one of Group 3 transition metal, Group 4 transition metal, Group 5 transition metal, and Group 6 transition metal, A is at least one of a Group 12 element, Group 13 element, Group 14 element, Group 15 element and Group 16 element, X is one of carbon (C), nitrogen (N) and a combination thereof, Ts is one of oxide (O), epoxide, hydroxide (OH), alkoxide having 1-5 carbon atoms, fluoride (F), chloride (Cl), bromide (Br), iodide (I), and a combination thereof, and n is one of 1, 2 and 3.
Public/Granted literature
- US20170088429A1 MXENE NANOSHEET AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-03-30
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