A method includes obtaining a Photonic Integrated Circuit (PIC) with a butt-joint between a first core and a second core, wherein the butt-joint includes a poor quality region, wherein the first core is associated with a first optical device and the second core is associated with a second optical device, and wherein the first optical device and the second optical device are each on the PIC; etching away at least part of the poor quality region to form an etch trench between the first core and the second core; and growing an interconnect core between the first core and the second core in the etch trench.