Invention Grant
- Patent Title: Composition for forming resist underlayer film
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Application No.: US16097586Application Date: 2017-04-11
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Publication No.: US10684546B2Publication Date: 2020-06-16
- Inventor: Yasushi Sakaida , Kenji Takase , Takahiro Kishioka , Rikimaru Sakamoto
- Applicant: NISSAN CHEMICAL CORPORATION
- Applicant Address: JP Tokyo
- Assignee: NISSAN CHEMICAL CORPORATION
- Current Assignee: NISSAN CHEMICAL CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@45202fb3
- International Application: PCT/JP2017/014849 WO 20170411
- International Announcement: WO2017/187969 WO 20171102
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/09 ; C07D487/04 ; C09D133/14 ; C09D163/00 ; C08K5/3445

Abstract:
A composition for forming a resist underlayer film has excellent storage stability at normal temperature. A composition for forming a resist underlayer film for lithography including a nitrogen-containing compound having 2 to 6 substituents of the following Formula (1) which bond to nitrogen atoms in one molecule, a polymer, a compound that promotes a crosslinking reaction, and an organic solvent. The nitrogen-containing compound having 2 to 6 substituents of Formula (1) in one molecule is for example a glycoluril derivative of the following Formula (1A). In the formula, each R1 is a methyl group or an ethyl group, and R2 and R3 are independently a hydrogen atom, a C1-4 alkyl group, or phenyl group.
Public/Granted literature
- US20190163063A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM Public/Granted day:2019-05-30
Information query
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