Invention Grant
- Patent Title: Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices
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Application No.: US15462347Application Date: 2017-03-17
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Publication No.: US10684793B2Publication Date: 2020-06-16
- Inventor: Hoi-ju Chung , Su-a Kim , Mu-jin Seo , Hak-soo Yu , Jae-youn Youn , Hyo-jin Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6b524980
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F3/06 ; G06F11/10 ; G06F11/07 ; G11C11/409 ; G11C29/00 ; G11C29/52

Abstract:
A memory controller includes a controller input/output circuit configured to output a first command to read first data, and output a second command to read an error corrected portion of the first data. A memory device includes: an error detector, a data storage circuit and an error correction circuit. The error detector is configured to detect a number of error bits in data read from a memory cell in response to a first command. The data storage circuit is configured to store the read data if the detected number of error bits is greater than or equal to a first threshold value. The error correction circuit is configured to correct the stored data.
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