Invention Grant
- Patent Title: Electronic devices and method for fabricating the same
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Application No.: US15876690Application Date: 2018-01-22
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Publication No.: US10685692B2Publication Date: 2020-06-16
- Inventor: Jong-Koo Lim , Yang-Kon Kim , Ku-Youl Jung , Guk-Cheon Kim , Jeong-Myeong Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Perkins Coie LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3def07ca
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/10 ; H01L43/08 ; H01L43/02 ; H01L43/12 ; H01L27/22
Abstract:
An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer including a CoFeBAl alloy and having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the CoFeBAl alloy may have an Al content less than 10 at %.
Public/Granted literature
- US20180233187A1 ELECTRONIC DEVICES AND METHOD FOR FABRICATING THE SAME Public/Granted day:2018-08-16
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