A sense amplifier circuit is provided for determining a state value of a resistive memory cell, wherein the resistive memory cell comprises a first resistive memory cell element, by means of a second resistive memory cell element, which is part of the resistive memory cell or a memory cell-external reference memory cell element. The sense amplifier circuit can include: a switch structure, a first storage element, a second storage element, and a control circuit. The control circuit controls the switch structure in such a way that in a first phase an electrical voltage present at the first resistive memory cell element or a voltage derived therefrom is fed to the first storage element and an electrical voltage present at the second resistive memory cell element or a voltage derived therefrom is fed to the second storage element. And in a second phase an electrical voltage present at the first resistive memory cell element or a voltage derived therefrom is provided and an electrical voltage present at the second resistive memory cell element or a voltage derived therefrom is provided. An evaluation circuit is configured to determine a state value of the resistive memory cell using the voltages fed to the storage elements in the first phase, or values derived therefrom, and the voltages provided in the second phase, or values derived therefrom.