Invention Grant
- Patent Title: Memory device and operation method thereof
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Application No.: US16223656Application Date: 2018-12-18
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Publication No.: US10685719B2Publication Date: 2020-06-16
- Inventor: Hyun-Woo Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@525ac4dd
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/10 ; G06F3/06 ; G11C7/04

Abstract:
A method for operating a memory device includes: receiving a program command, a memory address, and a program data from a controller; performing a first temperature sensing operation for measuring an internal temperature to produce a first result of the first temperature sensing operation; performing a program operation on the program data based on the first result of the first temperature sensing operation; performing a second temperature sensing operation for measuring an internal temperature to produce a first result of the second temperature sensing operation; and performing a temperature comparison operation for deciding whether the program operation failed when a difference between the first result of the first temperature sensing operation and the first result of the second temperature sensing operation is greater than or equal to a threshold value.
Public/Granted literature
- US20190371412A1 MEMORY DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2019-12-05
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