A back-end-of-the-line (BEOL) metal-insulator-metal (MIM) capacitor is provided that includes three electrode plates in which the first electrode plate of the MIM capacitor is an electrically conductive interconnect structure embedded in a first interconnect dielectric material layer. The other two electrode plates are located in a second interconnect dielectric material layer that is located above the first interconnect dielectric material layer. A first contact structure is present in the second interconnect dielectric material layer and contacts a surface of the first interconnect dielectric material layer, wherein the first contact structure passes through the second electrode plate. A second contact structure is also present in the second interconnect dielectric material layer and contacts a surface of the first electrode plate, wherein the second contact structure passes through the third electrode plate. Capacitor dielectric materials are located between each of the electrode plates.