A sputtering target formed from monocrystalline silicon is provided, wherein a sputter surface of the sputtering target is a plane inclined at an angle that exceeds 1° and is less than 10° from a {100} plane. The sputtering target formed from monocrystalline silicon provides a sputtering target which yields superior mechanical strength as well as exhibiting a sputter performance which is equivalent to that of a {100} plane. From a different perspective, in addition to superior mechanical strength, the monocrystalline silicon sputtering target yields superior particle characteristics, sputtering rate, crack resistance, surface shape uniformity and other characteristics.