Invention Grant
- Patent Title: Semiconductor structures and fabrication methods thereof
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Application No.: US15986023Application Date: 2018-05-22
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Publication No.: US10685831B2Publication Date: 2020-06-16
- Inventor: Fu Cheng Chen , Jian Gang Lu
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@698c6ad8
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/321 ; H01L23/00 ; H01L23/373 ; H01L23/10 ; H01L21/683 ; H01L23/31 ; H01L23/13

Abstract:
A semiconductor structure includes providing a substrate including a first surface and a second surface opposite to the first surface. The first surface is a functional surface. The method also includes forming a plastic seal layer on the first surface of the substrate, and performing a thinning-down process on the second surface of the substrate after forming the plastic seal layer. The plastic seal layer provides support for the substrate during the thinning-down process, and thus warping or cracking of the plastic seal layer 240 may be avoided. In addition, the plastic seal layer can also be used as a material for packaging the substrate. Therefore, after the thinning-down process, the plastic seal layer does not need to be removed. As such, the fabrication process is simplified, and the production cost is reduced.
Public/Granted literature
- US20180337038A1 SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF Public/Granted day:2018-11-22
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