Invention Grant
- Patent Title: Semiconductor structure with through silicon via and method for fabricating and testing the same
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Application No.: US16417589Application Date: 2019-05-20
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Publication No.: US10685907B2Publication Date: 2020-06-16
- Inventor: Hsueh-Hao Shih
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/66 ; H01L23/00
Abstract:
A semiconductor structure with a through silicon via includes a substrate having a front side and a back side. The through silicon via penetrates the substrate. A device is disposed on the front side of the substrate. Numerous dielectric layers cover the front side. A first test pad for testing the device is disposed on the front side of the substrate. A second test pad for testing the through silicon via is disposed on the back side of the substrate. A method of fabricating and testing the semiconductor structure is also provided.
Public/Granted literature
- US20190273033A1 SEMICONDUCTOR STRUCTURE WITH THROUGH SILICON VIA AND METHOD FOR FABRICATING AND TESTING THE SAME Public/Granted day:2019-09-05
Information query
IPC分类:
