Invention Grant
- Patent Title: Photomask design for generating plasmonic effect
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Application No.: US15638010Application Date: 2017-06-29
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Publication No.: US10685950B2Publication Date: 2020-06-16
- Inventor: Minfeng Chen , Shuo-Yen Chou
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L27/02 ; G03F7/20 ; G03F1/36 ; G03F1/00 ; G03F1/54

Abstract:
A method includes providing a photomask having a patterned absorption layer over a substrate. The photomask is irradiated with a beam having a mixture of transverse electronic (TE) waves and transverse magnetic (TM) waves. The irradiating includes generating surface plasmonic polaritons (SPP) on a sidewall of the patterned absorption layer. The SPP is used to suppress the TM waves while reflecting the TE waves. A target substrate is exposed to TE waves.
Public/Granted literature
- US20190006343A1 Photomask Design for Generating Plasmonic Effect Public/Granted day:2019-01-03
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