A semiconductor memory device according to an embodiment includes a base portion, a laminated body, a second conductive layer, and a columnar body. The columnar body includes a semiconductor body and a charge storage film. The semiconductor body includes a first region and a second region. The first region extends from a connection portion between the semiconductor body and the first semiconductor portion to the inside of the second conductive layer. The first region includes a first material. The second region is positioned closer to the laminated body than the first region is and is configured such that at least a portion is present within the second conductive layer. The second region does not include the first material or has a concentration of the first material which is lower than that in the first region. A first outer circumferential length of the semiconductor body within the second conductive layer is larger than a second outer circumferential length of the semiconductor body on a first surface which is an interface between the second conductive layer and the laminated body.