Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US16263750Application Date: 2019-01-31
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Publication No.: US10686005B2Publication Date: 2020-06-16
- Inventor: Chia-Yu Wei , Chin-Hsun Hsiao , Yi-Hsing Chu , Yen-Liang Lin , Yung-Lung Hsu , Hsin-Chi Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A semiconductor structure includes a semiconductive substrate including a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, and an ILD disposed over the first side of the semiconductive substrate, and a conductive pad disposed within the semiconductive substrate and the ILD, and electrically connected to an interconnect structure. A top surface of the conductive pad is between the first side of the semiconductive substrate and the second side of the semiconductor substrate.
Public/Granted literature
- US20190165011A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2019-05-30
Information query
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