A semiconductor memory device according to an embodiment, includes a pair of first electrodes, a semiconductor pillar, an inter-pillar insulating member, a first insulating film, a second electrode, and a second insulating film. The pair of first electrodes are separated from each other, and extend in a first direction. The semiconductor pillar and the inter-pillar insulating member are arranged alternately along the first direction between the pair of first electrodes. The semiconductor pillar and the inter-pillar insulating member extend in a second direction crossing the first direction. The first insulating film is provided at a periphery of the semiconductor pillar. The second electrode is provided between the first insulating film and each electrode of the pair of first electrodes. The second electrode is not provided between the semiconductor pillar and the inter-pillar insulating member. The second insulating film is provided between the second electrode and the first electrode.