Invention Grant
- Patent Title: Method of manufacturing a semiconductor device and a semiconductor device
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Application No.: US16415557Application Date: 2019-05-17
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Publication No.: US10686050B2Publication Date: 2020-06-16
- Inventor: Georgios Vellianitis
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/00 ; H01L29/49 ; H01L29/786 ; H01L21/02 ; H01L21/28 ; H01L29/66 ; H01L29/06 ; H01L29/423 ; H01L29/51 ; H01L21/762
Abstract:
In a method of manufacturing a semiconductor device, a single crystal oxide layer is formed over a substrate. After the single crystal oxide layer is formed, an isolation structure to define an active region is formed. A gate structure is formed over the single crystal oxide layer in the active region. A source/drain structure is formed.
Public/Granted literature
- US20200098881A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE Public/Granted day:2020-03-26
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