Invention Grant
- Patent Title: Semiconductor device having termination region with insulator having low coefficient of moisture absorption
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Application No.: US16162513Application Date: 2018-10-17
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Publication No.: US10686068B2Publication Date: 2020-06-16
- Inventor: Noboru Morimoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@353fac63
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/868 ; H01L29/739 ; H01L29/66 ; H01L29/10
Abstract:
A semiconductor device includes: a semiconductor substrate having a cell region in which a device is provided, and a termination region provided around the cell region; a first insulating film provided on the semiconductor substrate in the termination region and having a plurality of openings; a plurality of metal electrodes provided in the termination region and connected to the semiconductor substrate via the plurality of openings; and a second insulating film having lower coefficient of moisture absorption than that of the first insulating film and covering the first insulating film and the plurality of metal electrodes, wherein the second insulating film is in direct contact with the semiconductor substrate in a region from the outermost electrode of the plurality of metal electrodes to an end part of the semiconductor substrate.
Public/Granted literature
- US20190305140A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-10-03
Information query
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