A semiconductor device includes a source and a drain and a channel disposed between the source and the drain, a first gate dielectric layer disposed on the channel, a first gate electrode disposed on the first gate dielectric layer, a second gate dielectric layer disposed on the first gate electrode, and a second gate electrode disposed on the second gate dielectric layer. The second gate dielectric layer is made of a ferroelectric material. A first area of a bottom surface of the first gate electrode which is in contact with the first gate dielectric layer where the is greater than a second area of a bottom surface of the second gate dielectric layer which is in contact with the first gate electrode.