Invention Grant
- Patent Title: Semiconductor structure and fabrication method thereof
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Application No.: US16044272Application Date: 2018-07-24
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Publication No.: US10686078B2Publication Date: 2020-06-16
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@40c873c9
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/82 ; H01L29/66 ; H01L21/84 ; H01L21/265 ; H01L21/8238 ; H01L21/266 ; H01L29/165
Abstract:
A semiconductor structure and fabrication method are provided. The method includes: providing a substrate; forming first fins on the substrate; forming barrier layers covering sidewalls of the first fins; forming a first groove in each first between the adjacent first barrier layers; and forming a first inner epitaxial layer in each first groove. The first fin and the adjacent first barrier layers surround the corresponding first groove.
Public/Granted literature
- US20190035932A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2019-01-31
Information query
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