Invention Grant
- Patent Title: Photodetection element
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Application No.: US16114360Application Date: 2018-08-28
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Publication No.: US10686094B2Publication Date: 2020-06-16
- Inventor: Wei Dong , Hiroyasu Fujiwara , Kazutoshi Nakajima
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5c237a25
- Main IPC: H01L31/108
- IPC: H01L31/108 ; H01L31/0232 ; H01L31/0224 ; G02B6/122 ; H01L31/0352 ; H01L31/0236 ; G02B6/12

Abstract:
A photodetection element includes a semiconductor layer having, on one surface side, a periodic concave/convex structure that includes periodic convex portions and concave portions and converts light into surface plasmon, and a metal film provided on the one surface side of the semiconductor layer in correspondence to the periodic concave/convex structure, and in the periodic concave/convex structure, a Schottky junction portion that has a Schottky junction with the metal film is provided on a base end side of the convex portion, and a non-Schottky junction portion that does not have a Schottky junction with the metal film is provided on a distal end side of the convex portion.
Public/Granted literature
- US20190074396A1 PHOTODETECTION ELEMENT Public/Granted day:2019-03-07
Information query
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