Invention Grant
- Patent Title: Semiconductor light emitting device
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Application No.: US16028969Application Date: 2018-07-06
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Publication No.: US10686101B2Publication Date: 2020-06-16
- Inventor: Ju Heon Yoon , Ha Yeong Son , Young Sub Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2f658b0f
- Main IPC: H01L33/42
- IPC: H01L33/42 ; H01L33/46 ; H01L33/44 ; H01L33/62 ; H01L33/40 ; H01L33/06 ; H01L33/32 ; H01L33/00

Abstract:
Provided is a semiconductor light emitting device which includes: a light emitting structure including a plurality of semiconductor layers and configured to generate and emit light to an outside of the light emitting structure; a transparent electrode layer disposed on the light emitting structure; a transparent protective layer disposed on the transparent electrode layer; a distributed Bragg reflector (DBR) layer disposed on the transparent protective layer and covering at least a part of the transparent electrode layer; and at least one electrode pad connected to the transparent electrode layer through a hole or via.
Public/Granted literature
- US20190273187A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2019-09-05
Information query
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